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| SMD Schottky Barrier Diode COMCHIP SMD Diodes Specialist CDBF0230R Io = 200 mA VR = 30 Volt s Features Low forward Voltage (Lead-free Device) Designed for mounting on small surface. Extremely thin/leadless package. Majority carrier conduction. 1005(2512) 0.102(2.60) 0.095(2.40) Mechanical data Case: SOD-323F (2512) Standard package , molded plastic. 0.051(1.30) 0.043(1.10) 0.035(0.90) Terminals: Gold plated, solderable per MIL-STD-750, method 2026. Polarity: Indicated by cathode band. Mounting position: Any. Weight: 0.006 gram (approximately). 0.027(0.70) 0.020(0.50) Typ. 0.012 (0.30) Typ. 0.020(0.50) Typ. Dimensions in inches and (millimeter) Maximum Rating ( at T A = 25 C unless otherwise noted ) Parameter Repetitive peak reverse voltage Reverse voltage Average forward rectified current Forward current , surge peak Storage temperature Junction temperature 8.3 ms single half sine-wave superimposed on rate load ( JEDEC method ) Conditions Symbol Min Typ Max Unit VRRM VR Io IFSM TSTG Tj -40 -40 35 30 200 1 +125 +125 V V mA A C C Electrical Characteristics ( at T A = 25 C unless otherwise noted ) Parameter Forward voltage Reverse current I F = 200 mA VR = 10 V Conditions Symbol Min Typ Max Unit VF IR 0.6 1 V uA REV:A QW-A1028 Page 1 SMD Schottky Barrier Diode COMCHIP SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CDBF0230R) Fig. 1 - Forward characteristics 1000 1m 125C Fig. 2 - Reverse characteristics Forward current (mA ) 100u 100 Reverse current ( A ) 10u 75 C 10 1u 100n 25 C o C o 5 7 5 C 12 5 1 o 2 C o 5 2 C 10n 25 C 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 1n 0 5 10 15 20 25 30 Forward voltage (V) Reverse voltage (V) Fig. 3 - Capacitance between terminals characteristics Capacitance between terminals (pF) 100 Fig. 4 - Current derating curve Average forward current ( % ) 100 80 10 60 40 20 1 0 0 5 10 15 20 25 30 0 25 50 75 100 125 Reverse voltage (V) Ambient temperature ( C ) REV:A QW-A1028 Page 2 |
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